Se-Vacancy Healing with Substitutional Oxygen in WSe<sub>2</sub> for High-Mobility p-Type Field-Effect Transistors-Reference-Cited by-同舟云学术

Se-Vacancy Healing with Substitutional Oxygen in WSe₂ for High-Mobility p-Type Field-Effect Transistors

Published:2023-05-01 Issue:12 Volume:17 Page:11279-11289
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Cho Haewon¹^ORCID,Sritharan Mayuri²,Ju Younghyun¹,Pujar Pavan¹³^ORCID,Dutta Riya¹,Jang Woo-Sung⁴,Kim Young-Min⁴,Hong Seongin⁵,Yoon Youngki²^ORCID,Kim Sunkook¹^ORCID

Affiliation:

1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon-Si, Gyeonggi-do 16419, Republic of Korea

2. Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology (WIN), University of Waterloo, Waterloo, Ontario N2L 3G1, Canada

3. Department of Ceramic Engineering, Indian Institute of Technology (IIT-BHU), Varanasi, Uttar Pradesh 221005, India

4. Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea

5. Department of Physics, Gachon University, Seongnam 13120, Republic of Korea

Funder

National Research Foundation of Korea

Waterloo Institute for Nanotechnology, University of Waterloo

Natural Sciences and Engineering Research Council of Canada

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

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