Three‐Dimensional Reconstruction of Conductive Filaments in HfO <sub>x</sub> ‐Based Memristor-Reference-Cited by-同舟云学术

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Three‐Dimensional Reconstruction of Conductive Filaments in HfO _x ‐Based Memristor

Published:2023-01-05 Issue:10 Volume:35 Page:2209925
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Wei Tiantian¹,Lu Yuyao¹,Zhang Fan²,Tang Jianshi¹³,Gao Bin¹³^ORCID,Yu Pu²⁴,Qian He¹³,Wu Huaqiang¹³

Affiliation:

1. School of Integrated Circuits Tsinghua University Beijing 100084 China

2. State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics Tsinghua University Beijing 100084 China

3. Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Beijing 100084 China

4. Frontier Science Center for Quantum Information Beijing 100084 China

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202209925

Reference34 articles.

1. Memristor-The missing circuit element

2. The missing memristor found

3. Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch

4. Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

5. Metal–Oxide RRAM

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