High‐Performance Solution‐Processed 2D P‐Type WSe <sub>2</sub> Transistors and Circuits through Molecular Doping-Reference-Cited by-同舟云学术

High‐Performance Solution‐Processed 2D P‐Type WSe ₂ Transistors and Circuits through Molecular Doping

Published:2022-12-16 Issue:7 Volume:35 Page:2208934
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Zou Taoyu¹,Kim Hyun‐Jun¹,Kim Soonhyo¹²,Liu Ao¹,Choi Min‐Yeong¹,Jung Haksoon¹,Zhu Huihui¹,You Insang¹,Reo Youjin¹,Lee Woo‐Ju¹,Kim Yong‐Sung²³,Kim Cheol‐Joo¹,Noh Yong‐Young¹^ORCID

Affiliation:

1. Department of Chemical Engineering Pohang University of Science and Technology 77 Cheongam‐Ro Nam‐Gu Pohang 37673 Republic of Korea

2. Korea Research Institute of Standards and Science Daejeon 34113 Republic of Korea

3. Department of Nano Science University of Science and Technology Daejeon 34113 Republic of Korea

Funder

National Research Foundation

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202208934

Reference67 articles.

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4. Van der Waals integration before and beyond two-dimensional materials

5. Emerging 2D Materials Produced via Electrochemistry

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