Depth‐dependent strain distribution in AlGaN‐based deep ultraviolet light‐emitting diodes using surface‐plasmon‐enhanced Raman spectroscopy
Author:
Affiliation:
1. Department of Physics Kongju National University Gongju‐si Chungnam South Korea
2. UJL INC. Siheung‐si Gyeonggi‐do South Korea
3. Silicon Display Yongin‐si Gyeonggi‐do South Korea
Funder
Kongju National University
National Research Foundation of Korea
Publisher
Wiley
Subject
Spectroscopy,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/jrs.6247
Reference36 articles.
1. High-Power 365 nm UV LED Mercury Arc Lamp Replacement for Photochemistry and Chemical Photolithography
2. Effect of electrical injection-induced stress on interband transitions in high Al content AlGaN MQWs
3. Strain effect on the optical polarization properties of c-plane Al_026Ga_074N/GaN superlattices
4. Valence band engineering for remarkable enhancement of surface emission in AlGaN deep-ultraviolet light emitting diodes
5. Light-Emitting Diodes
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1. Impacts of p-GaN layer thickness on the photoelectric and thermal performance of AlGaN-based deep-UV LEDs;Optics Express;2023-10-16
2. Self-catalytic growth and characterization of AlGaN nanostructures with high Al composition;Journal of Materials Science: Materials in Electronics;2022-04-08
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