Effect of electrical injection-induced stress on interband transitions in high Al content AlGaN MQWs-Reference-Cited by-同舟云学术

Effect of electrical injection-induced stress on interband transitions in high Al content AlGaN MQWs

Published:2017 Issue:87 Volume:7 Page:55157-55162
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zheng Jinjian¹²³⁴⁵,Li Jinchai¹²³⁴⁵^ORCID,Zhong Zhibai¹²³⁴⁵,Lin Wei¹²³⁴⁵,Chen Li¹²³⁴⁵,Li Kongyi¹²³⁴⁵,Wang Xinghe⁶⁴⁵,Chou Chilun⁶⁴⁵,Li Shuiqing⁶⁴⁵,Kang Junyong¹²³⁴⁵

Affiliation:

1. Department of Physics

2. Fujian Provincial Key Laboratory of Semiconductor Materials and Applications

3. Xiamen University

4. Xiamen

5. P. R. China

6. San'an Optoelectronics Co., Ltd.

Abstract

The light extraction from AlGaN deep ultraviolet light-emitting diodes (UV LEDs) is known to be limited by the fundamental valence band crossover issue.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA10440E

Reference24 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

3. Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures