Strain effect on the optical polarization properties of c-plane Al_026Ga_074N/GaN superlattices
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference18 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region
3. Valence band engineering for remarkable enhancement of surface emission in AlGaN deep-ultraviolet light emitting diodes
4. First-principles calculations of effective-mass parameters of AlN and GaN
5. Valence band splittings and band offsets of AlN, GaN, and InN
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1. Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates;Applied Physics Letters;2023-10-02
2. Depth‐dependent strain distribution in AlGaN‐based deep ultraviolet light‐emitting diodes using surface‐plasmon‐enhanced Raman spectroscopy;Journal of Raman Spectroscopy;2021-09-17
3. TE/TM mode full-spatial decomposition of AlGaN-based deep ultraviolet light-emitting diodes;Journal of Physics D: Applied Physics;2020-03-09
4. Optical polarization characteristics and light extraction behavior of deep-ultraviolet LED flip-chip with full-spatial omnidirectional reflector system;Optics Express;2019-09-19
5. Large area deep ultraviolet light of Al0.47Ga0.53N/Al0.56Ga0.44N multi quantum well with carbon nanotube electron beam pumping;AIP Advances;2019-07
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