Large area deep ultraviolet light of Al0.47Ga0.53N/Al0.56Ga0.44N multi quantum well with carbon nanotube electron beam pumping-Reference-Cited by-同舟云学术

Large area deep ultraviolet light of Al0.47Ga0.53N/Al0.56Ga0.44N multi quantum well with carbon nanotube electron beam pumping

Published:2019-07 Issue:7 Volume:9 Page:075104
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Yoo Sung Tae¹,So Byeongchan²^ORCID,Lee Hye In¹,Nam Okhyun²,Chang Park Kyu¹

Affiliation:

1. Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 02447, South Korea

2. Convergence Center for Advanced Nano Semiconductor (CANS), Department of Nano-optical Engineering, Korea Polytechnic University, Siheung-Si, Gyeonggi-do 15073, South Korea

Funder

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5109956

Reference21 articles.

1. LED revolution: fundamentals and prospects for UV disinfection applications

2. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

3. Realization of high-efficiency deep-UV LEDs using transparent p-AlGaN contact layer

4. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

5. Efficiency Improvement of Deep-Ultraviolet Light Emitting Diodes with Gradient Electron Blocking Layers

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2. 2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters;Nanomaterials;2023-03-16

3. Aluminum Nitride Ultraviolet Light-Emitting Device Excited via Carbon Nanotube Field-Emission Electron Beam;Nanomaterials;2023-03-16

4. Far-UVC emission of polarity-engineered AlGaN MQW using carbon nanotube-based cold cathode electron beam;Applied Physics Letters;2023-02-27

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