63.4: High-Performance 4K x 2K 65-in. TV with BCE-Type Oxide TFTs
Author:
Affiliation:
1. Array/CF Technology Development Div. AU Optronics, Science-Based Industrial Park, Hsinchu, Taiwan
Publisher
Wiley
Reference5 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,2004
2. 32-inch LCD Panel Using Amorphous Indium-Gallium-Zinc-Oxide TFTs;Lu;Journal of the SID,2010
3. Environment-dependent stability of passivation-free indium zinc oxide thin film transistor after gate bias stress;Liu;Appl. Phys. Lett.,2009
4. Improvement of stability on a-IGZO LCD;Wu;Journal of the SID,2012
5. Gate bias-stress induced hump-effect in transfer characteristics of amorphous indium gallium zinc oxide thin film transistors with various channel widths;M. Seok;Appl. Phys. Lett.,2011
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