Effect of Positive Bias Stress on the Back-Gate Voltage-Modulated Threshold Voltage in Double-Gate Amorphous InGaZnO Thin-Film Transistors-Reference-Cited by-同舟云学术

Effect of Positive Bias Stress on the Back-Gate Voltage-Modulated Threshold Voltage in Double-Gate Amorphous InGaZnO Thin-Film Transistors

Published:2022-11 Issue:11 Volume:43 Page:1878-1881
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Park Jingyu¹,Park Shinyoung¹,Jang Jun Tae¹^ORCID,Choi Sung-Jin¹^ORCID,Kim Dong Myong¹^ORCID,Bae Jong-Ho¹^ORCID,Shin Hong Jae²,Jeong Yun Sik²,Bae Jong Uk²^ORCID,Oh Chang Ho²,Kim Changwook¹^ORCID,Kim Dae Hwan¹^ORCID

Affiliation:

1. School of Electrical Engineering, Kookmin University, Seoul, South Korea

2. LG Display Company, Paju, South Korea

Funder

LG Display Company

National Research Foundation of Korea (NRF) Grant through the Korea Government [Ministry of Science and ICT (MSIT)]

Institute of Information and Communications Technology Planning and Evaluation (IITP) Grant through the Korea Government

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9927475/09888124.pdf?arnumber=9888124

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4. Quantitative Analysis of Channel Width Effects on Electrical Performance Degradation of Top-gate Self-aligned Coplanar IGZO Thin-film Transistors under Self-heating Stresses;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2023-02-28

5. Influence of Rf Power in the Sputter Deposition of Amorphous Ingazno Film on the Transient Drain Current of Amorphous Ingazno Thin-Film Transistors;2023