SiO compound formation by oxygen ion implantation into silicon-Reference-Cited by-同舟云学术

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SiO compound formation by oxygen ion implantation into silicon

Published:1985-10 Issue:5 Volume:7 Page:207-210
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Hensel E.,Wollschläger K.,Schulze D.,Kreissig U.,Skorupa W.,Finster J.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference20 articles.

1. Ion Implantation and Annealing Effects in SiO[sub 2] Layers on Silicon Studied by Optical Measurements

2. Formation of thin SiO2 films by high dose oxygen ion implantation into silicon and their investigation by IR techniques

3. A study of silicon oxides prepared by oxygen implantation into silicon

4. Properties of SiO2 films formed by oxygen implantation into silicon

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