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Formation of thin SiO2 films by high dose oxygen ion implantation into silicon and their investigation by IR techniques

  • Published:1976-07 Issue:3 Volume:35 Page:327-336
  • ISSN:0040-6090
  • Container-title:Thin Solid Films
  • language:en
  • Short-container-title:Thin Solid Films

Author:

Dylewski J.,Joshi M.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Ion Beams with Applications to Ion Implantation;Wilson,1973

2. Formation of SiO2Films by Oxygen-Ion Bombardment

3. European Conf. on Ion Implantation;Freeman,1970

4. Ion Implantation in Semiconductors;Borders,1971

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1. Silicon negative ion implantation induced vacancy defects in thermally grown SiO2 thin films;Radiation Effects and Defects in Solids;2020-05-05

2. Development and test of 2.45 GHz microwave ion source based intense ion beam experimental facility;Vacuum;2016-02

3. Structural studies of 20 keV oxygen-implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-08

4. Simox technology: From basic research to industrial developments;Radiation Effects and Defects in Solids;1994-01

5. Evaluation of electrical properties of vanadium suicide-silicon Schottky diodes formed by ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-07
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