Distribution of hydrogen in the NPL standard ta2O5 films
Author:
Publisher
Wiley
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference6 articles.
1. Tantalum Pentoxide on Tantalum Foil BCR No. 261, EUR 8839 EN, (1983).
2. The depth dependence of the depth resolution in composition-depth profiling with Auger Electron Spectroscopy
3. Characterization of a high depth-resolution tantalum pentoxide sputter profiling reference material
4. Atomic mixing and electron range effects in ultrahigh‐resolution profiles of the Ta2O5/Ta interface by argon sputtering with Auger electron spectroscopy
5. An accurate and sensitive method for the determination of the depth distribution of light elements in heavy materials
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1. Point defects in stoichiometric and nonstoichiometric metal oxides for modern microelectronics;Metal Oxide Defects;2023
2. Absorption, discharge, and internal partitioning behavior of hydrogen in the tantalum and tantalum oxide system investigated by in situ oxidation SIMS and ab initio calculations;Journal of Vacuum Science & Technology B;2020-05
3. H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells;Journal of Applied Physics;2015-03-23
4. Influence of primary ion beam irradiation conditions on the depth profile of hydrogen in tantalum film;Applied Surface Science;2008-12
5. Evaluation of Hydrogen in Tantalum Thin Films Using Secondary Ion Mass Spectrometry;Japanese Journal of Applied Physics;2008-01-22
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