P-GaSe/N-MoS2 Vertical Heterostructures Synthesized by van der Waals Epitaxy for Photoresponse Modulation-Reference-Cited by-同舟云学术

P-GaSe/N-MoS2 Vertical Heterostructures Synthesized by van der Waals Epitaxy for Photoresponse Modulation

Published:2018-01-10 Issue:7 Volume:14 Page:1702731
ISSN:1613-6810
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language:en
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Author:

Zhou Nan¹,Wang Renyan¹,Zhou Xing¹,Song Hongyue²,Xiong Xing¹,Ding Yao³,Lü Jingtao²,Gan Lin¹,Zhai Tianyou¹^ORCID

Affiliation:

1. State Key Laboratory of Material Processing and Die and Mould Technology; School of Materials Science and Engineering; Huazhong University of Science and Technology (HUST); Wuhan 430074 P. R. China

2. School of Physics; Huazhong University of Science and Technology (HUST); Wuhan 430074 P. R. China

3. Department of Chemical and Biological Engineering; Hong Kong University of Science and Technology (HKUST); Hong Kong P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference70 articles.

1. Epitaxial growth of a monolayer WSe 2 -MoS 2 lateral p-n junction with an atomically sharp interface

2. Lateral Epitaxy of Atomically Sharp WSe2/WS2 Heterojunctions on Silicon Dioxide Substrates

3. Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction

4. Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode

5. Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2/MoS2Dichalcogenide Heterojunction

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