Lateral Epitaxy of Atomically Sharp WSe2/WS2 Heterojunctions on Silicon Dioxide Substrates-Reference-Cited by-同舟云学术

Lateral Epitaxy of Atomically Sharp WSe2/WS2 Heterojunctions on Silicon Dioxide Substrates

Published:2016-10-03 Issue:20 Volume:28 Page:7194-7197
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Chen Jianyi¹,Zhou Wu²³,Tang Wei¹,Tian Bingbing¹,Zhao Xiaoxu¹,Xu Hai¹,Liu Yanpeng¹,Geng Dechao¹,Tan Sherman Jun Rong¹,Fu Wei¹,Loh Kian Ping¹

Affiliation:

1. Department of Chemistry and Centre for Advanced 2D Materials, National University of Singapore, 3 Science Drive 3, 117546 Singapore

2. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

3. School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing 100049, China

Funder

National Research Foundation Singapore

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.6b03639

Reference19 articles.

1. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics

4. Scalable Production of a Few-Layer MoS2/WS2 Vertical Heterojunction Array and Its Application for Photodetectors

5. Light-emitting diodes by band-structure engineering in van der Waals heterostructures

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