Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2/MoS2Dichalcogenide Heterojunction-Reference-Cited by-同舟云学术

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Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2/MoS2Dichalcogenide Heterojunction

Published:2016-02-29 Issue:16 Volume:28 Page:3216-3222
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Pezeshki Atiye¹,Shokouh Seyed Hossein Hosseini¹,Nazari Tavakol¹,Oh Kyunghwan¹,Im Seongil¹

Affiliation:

1. Institute of Physics and Applied Physics; Yonsei University; 50 Yonsei-ro Seodaemun-gu Seoul 120-749 South Korea

Funder

NRF

Nano-Materials Technology Development Program

Brain Korea 21 plus Program

Yonsei University

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference41 articles.

1. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

2. Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials

3. Exfoliated multilayer MoTe2 field-effect transistors

4. Direct imprinting of MoS2 flakes on a patterned gate for nanosheet transistors

5. Molybdenum Disulfide Nanoflake–Zinc Oxide Nanowire Hybrid Photoinverter

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