Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy-Reference-Cited by-同舟云学术

Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy

Published:2016-03-03 Issue:17 Volume:12 Page:2313-2320
ISSN:1613-6810
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language:en
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Author:

Khan Jafar I.¹,Adhikari Aniruddha¹,Sun Jingya¹,Priante Davide²,Bose Riya¹,Shaheen Basamat S.¹,Ng Tien Khee²,Zhao Chao²,Bakr Osman M.¹,Ooi Boon S.²,Mohammed Omar F.¹

Affiliation:

1. Solar and Photovoltaics Engineering Research Center; Division of Physical Sciences and Engineering; King Abdullah University of Science and Technology; Thuwal 23955-6900 Kingdom of Saudi Arabia

2. Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering KAUST; Thuwal 23955-6900 Kingdom of Saudi Arabia

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference49 articles.

1. Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

2. Coaxial Group III−Nitride Nanowire Photovoltaics

3. Epitaxial Growth of InGaN Nanowire Arrays for Light Emitting Diodes

4. Core/Multishell Nanowire Heterostructures as Multicolor, High-Efficiency Light-Emitting Diodes

5. Optical Control of Internal Electric Fields in Band Gap-Graded InGaN Nanowires

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