Epitaxial Growth of InGaN Nanowire Arrays for Light Emitting Diodes-Reference-Cited by-同舟云学术

Epitaxial Growth of InGaN Nanowire Arrays for Light Emitting Diodes

Published:2011-04-25 Issue:5 Volume:5 Page:3970-3976
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Hahn Christopher¹,Zhang Zhaoyu¹,Fu Anthony¹,Wu Cheng Hao¹,Hwang Yun Jeong¹,Gargas Daniel J.¹,Yang Peidong¹

Affiliation:

1. Department of Chemistry, University of California, Berkeley, California 94720, United States, and Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley California 94720, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn200521r

Reference27 articles.

1. Research challenges to ultra-efficient inorganic solid-state lighting

2. Laser diodes go green

3. Microstructures produced during the epitaxial growth of InGaN alloys

4. Equilibrium limits of coherency in strained nanowire heterostructures

5. Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques

Cited by 114 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InGaN/GaN multi-quantum well nanowires: Enhanced trace-level NO2 detection for environmental and breath analysis;Chemical Engineering Journal;2024-07

2. Formation of NixCo1-xSe2 nanobelt solid solutions as competent electrode material for hybrid supercapattery;Chemical Engineering Journal;2024-03

3. InGaN nanorods/CuBi2O4 heterojunction photoanodes for photoelectrochemical water splitting;Journal of Alloys and Compounds;2024-01

4. III-nitride nanowires for emissive display technology;Journal of Information Display;2023-11-21

5. Light‐emitting Diodes and Lasers;Group III‐Nitride Semiconductor Optoelectronics;2023-10-18