SIMS quantification of SiGe composition with low-energy ion beams-Reference-Cited by-同舟云学术

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SIMS quantification of SiGe composition with low-energy ion beams

Published:2010-06-22 Issue:1-2 Volume:43 Page:657-660
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Zhu Zhengmao,Ronsheim Paul,Turansky Andrew,Hatzistergos Michael,Madan Anita,Pinto Teresa,Holt Judson,Reznicek Alexander

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference15 articles.

1. The revolution in SiGe: impact on device electronics

2. Quantitative SIMS analysis of SiGe composition with low energy O2+ beams

3. SIMS depth profiling of SiGe:C structures in test pattern areas using low energy cesium with a Cameca IMS Wf

4. Impact of the Ge concentration on the Ge-ionisation probability and the matrix sputter yield for a SiGe matrix under oxygen irradiation

5. Detection of Cs2Ge+ clusters for the quantification of germanium atoms by secondary ion mass spectrometry: Application to the characterization of Si1−xGex layers (0⩽x⩽1) and germanium diffusion in silicon

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1. Secondary Ion Mass Spectral Imaging of Metals and Alloys;Materials;2024-01-22

2. Measurement of SiGe composition in 3-D semiconductor Fin Field Effect Transistor devices;Journal of Applied Physics;2019-04-28

3. Advanced quantitative analysis of epitaxial SiGe composition on production wafer for logic devices;Surface and Interface Analysis;2017-11-07

4. Quantitative depth profiling of Si1–xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry;Thin Solid Films;2016-05

5. Mechanism of abnormal interface artifacts in SIMS depth profiling of a Si/Ge multilayer by oxygen ions;Surface and Interface Analysis;2014-03-03

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