SIMS depth profiling of SiGe:C structures in test pattern areas using low energy cesium with a Cameca IMS Wf-Reference-Cited by-同舟云学术

SIMS depth profiling of SiGe:C structures in test pattern areas using low energy cesium with a Cameca IMS Wf

Published:2004-06 Issue: Volume:231-232 Page:698-703
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Juhel M.,Laugier F.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference3 articles.

1. Cameca, IMS Wf Ion Optics User Guide, Ref. 45 633 801.

2. P.A.W. Van der Heide, M.S. Lim, S.S. Perry, J. Bennett, in: Proceedings of the 13th International Conference on Secondary Ion Mass Spectrometry, Elsevier, New York. ISBN 0-444-50323-4.

3. M.S. Denker, T. Buyuklimanli, J.T. Meyer, in: Proceedings of the 13th International Conference on Secondary Ion Mass Spectrometry, Elsevier, New York. ISBN 0-444-50323-4.

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Processing and characterization of polymeric biomaterials;Handbook of Polymers in Medicine;2023

2. Quantitative depth profiling of Si1–xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry;Thin Solid Films;2016-05

3. Nonlinear calibration curves in secondary ion mass spectrometry for quantitative analysis of gesi heterostructures with nanoclusters;Technical Physics Letters;2016-03

4. A new approach to the diagnostics of nanoislands in Ge x Si1 − x /Si heterostructures by secondary ion mass spectrometry;Technical Physics Letters;2014-07

5. Secondary Ion Mass Spectrometry;Characterization of Materials;2012-10-12