Detection of Cs2Ge+ clusters for the quantification of germanium atoms by secondary ion mass spectrometry: Application to the characterization of Si1−xGex layers (0⩽x⩽1) and germanium diffusion in silicon-Reference-Cited by-同舟云学术

Detection of Cs2Ge+ clusters for the quantification of germanium atoms by secondary ion mass spectrometry: Application to the characterization of Si1−xGex layers (0⩽x⩽1) and germanium diffusion in silicon

Published:2007-10 Issue:7 Volume:102 Page:074904
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Gavelle Mathieu,Scheid Emmanuel,Cristiano Fuccio,Armand Claude,Hartmann Jean-Michel,Campidelli Yves,Halimaoui Aomar,Fazzini Pier-Francesco,Marcelot Olivier

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2786037

Reference22 articles.

1. Germanium: From its discovery to SiGe devices

2. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

3. A Logic Nanotechnology Featuring Strained-Silicon

4. A novel elevated source/drain PMOSFET formed by Ge-B/Si intermixing

5. Application of silicon-germanium in the fabrication of ultra-shallow extension junctions for sub-100 nm PMOSFETs

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