Mechanism of abnormal interface artifacts in SIMS depth profiling of a Si/Ge multilayer by oxygen ions
Author:
Affiliation:
1. Division of Industrial Metrology; Korea Research Institute of Standards and Science; 267 Gajeon-ro, Yuseong-gu Daejeon 305-600 Korea
2. Department of Physics; Chungbuk National University; 410 Seongbong-ro, Heungdeok-gu Cheongju 361-763 Korea
Publisher
Wiley
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/sia.5422/fullpdf
Reference17 articles.
1. Significant improvement in depth resolution of Cr/Ni interfaces by secondary ion mass spectrometry profiling under normal O2+ion bombardment
2. Surface topography development on ion‐beam‐sputtered surfaces: Role of surface inhomogeneity induced by ion‐beam bombardment
3. Atomic mixing, surface roughness and information depth in high-resolution AES depth profiling of a GaAs/AlAs superlattice structure
4. Surface roughness-induced artifacts in secondary ion mass spectrometry depth profiling and a simple technique to smooth the surface
5. Quantitative depth profiling of an alternating Pt/Co multilayer and a Pt–Co alloy multilayer by SIMS using a Buckminsterfullerene (C60) source
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1. Artifacts in multilayer depth profiling: Origin and quantification of a double peak layer profile of Ag in ToF-SIMS depth profiles of an Ag/Ni multilayer;Materials Characterization;2021-01
2. Prediction and experimental determination of the layer thickness in SIMS depth profiling of Ge/Si multilayers: Effect of preferential sputtering and atomic mixing;Applied Surface Science;2019-07
3. Effects of period number and sputtering time on optical properties of Si/Ge multilayer films deposited by magnetron sputtering;Journal of Materials Science: Materials in Electronics;2017-10-25
4. Quantitative depth profiling of Si1–xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry;Thin Solid Films;2016-05
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