Prediction and experimental determination of the layer thickness in SIMS depth profiling of Ge/Si multilayers: Effect of preferential sputtering and atomic mixing-Reference-Cited by-同舟云学术

Prediction and experimental determination of the layer thickness in SIMS depth profiling of Ge/Si multilayers: Effect of preferential sputtering and atomic mixing

Published:2019-07 Issue: Volume:481 Page:1103-1108
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lian S.Y.^ORCID,Kim K.J.,Kim T.G.,Hofmann S.,Wang J.Y.^ORCID

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference17 articles.

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4. Comparative depth-profiling analysis of nanometer-metal multilayers by ion-probing techniques;Escobar;Trends Anal. Chem.,2009

5. Round-robin test for the measurement of layer thickness of multilayer films by secondary ion mass spectrometry depth profiling;Kim;Surf. Interface Anal.,2017

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1. Restoration of the original depth distribution from experimental SIMS profile using the depth resolution function in framework of RMR model;Journal of Vacuum Science & Technology B;2023-03-01

2. Effects of sputtering induced artifacts on the determination of diffusion coefficient: Application to Ni/Cu system;Vacuum;2022-08

3. Artifacts in multilayer depth profiling: Origin and quantification of a double peak layer profile of Ag in ToF-SIMS depth profiles of an Ag/Ni multilayer;Materials Characterization;2021-01