Significant improvement in depth resolution of Cr/Ni interfaces by secondary ion mass spectrometry profiling under normal O2+ion bombardment
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107397
Reference11 articles.
1. Beam-induced broadening effects in sputter depth profiling
2. Interface depth resolution of Auger sputter profiled Ni/Cr interfaces: Dependence on ion bombardment parameters
3. Surface transient behavior of the 30Si+ yield with angle of incidence and energy of an O+2 primary beam
4. Effect of ion mixing on the depth resolution of sputter depth profiling
5. Effect of surface roughening on secondary ion yields and erosion rates of silicon subject to oblique oxygen bombardment
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2. Evaluation of sputtering induced surface roughness development of Ni/Cu multilayers thin films by Time-of-Flight Secondary Ion Mass Spectrometry depth profiling with different energies O2+ ion bombardment;Thin Solid Films;2019-01
3. Round-robin test for the measurement of layer thickness of multilayer films by secondary ion mass spectrometry depth profiling;Surface and Interface Analysis;2017-07-27
4. Quantitative evaluation of sputtering induced surface roughness and its influence on AES depth profiles of polycrystalline Ni/Cu multilayer thin films;Applied Surface Science;2017-07
5. Mechanism of abnormal interface artifacts in SIMS depth profiling of a Si/Ge multilayer by oxygen ions;Surface and Interface Analysis;2014-03-03
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