Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces-Reference-Cited by-同舟云学术

Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces

Published:2016-06-01 Issue:32 Volume:28 Page:6852-6859
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Qin Qi Hang¹,Äkäslompolo Laura¹,Tuomisto Noora²,Yao Lide¹,Majumdar Sayani¹,Vijayakumar Jaianth¹,Casiraghi Arianna¹,Inkinen Sampo¹,Chen Binbin¹,Zugarramurdi Asier²,Puska Martti²,van Dijken Sebastiaan¹

Affiliation:

1. NanoSpin, Department of Applied Physics; Aalto University School of Science; P.O. Box, 15100 FI-00076 Aalto Finland

2. COMP Centre of Excellence; Department of Applied Physics; Aalto University; P.O. Box 11100 FI-00076 Aalto Finland

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference67 articles.

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2. Polarization Control of Electron Tunneling into Ferroelectric Surfaces

3. Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale

4. Room-Temperature Ferroelectric Resistive Switching in Ultrathin Pb(Zr0.2Ti0.8)O3 Films

5. Solid-state memories based on ferroelectric tunnel junctions

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