Polymer Doping Enables a Two‐Dimensional Electron Gas for High‐Performance Homojunction Oxide Thin‐Film Transistors-Reference-Cited by-同舟云学术

Polymer Doping Enables a Two‐Dimensional Electron Gas for High‐Performance Homojunction Oxide Thin‐Film Transistors

Published:2018-11-29 Issue:4 Volume:31 Page:1805082
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Chen Yao¹²,Huang Wei¹,Sangwan Vinod K.³,Wang Binghao¹,Zeng Li⁴,Wang Gang¹,Huang Yan²,Lu Zhiyun²,Bedzyk Michael J.³⁴,Hersam Mark C.³,Marks Tobin J.¹⁵,Facchetti Antonio¹⁶^ORCID

Affiliation:

1. Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road Evanston IL 60208 USA

2. Key Laboratory of Green Chemistry and Technology (Ministry of Education) College of Chemistry Sichuan University Chengdu 610064 P. R. China

3. Department of Materials Science and Engineering Northwestern University Evanston IL 60208 USA

4. Applied Physics Program and the Materials Research Center Northwestern University 2220 Campus Drive Evanston IL 60208 USA

5. Department of Materials Science and Engineering and the Argonne Northwestern Solar Energy Research Center (ANSER) Northwestern University 2145 Sheridan Road Evanston IL 60208 USA

6. Flexterra Inc. 8025 Lamon Avenue Skokie IL 60077 USA

Funder

Air Force Office of Scientific Research

Northwestern University

China Scholarship Council

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201805082

Reference53 articles.