High‐Mobility Helical Tellurium Field‐Effect Transistors Enabled by Transfer‐Free, Low‐Temperature Direct Growth
Author:
Affiliation:
1. Department of Materials Science and Engineering University of Texas at Dallas Richardson TX 75080 USA
2. Department of Electrical Engineering University of Notre Dame Notre Dame IN 46556 USA
Funder
Semiconductor Research Corporation
National Science Foundation
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201803109
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