Complete logic operations in an ambipolar tellurium homojunction via non-invasive scanning probe lithography-Reference-Cited by-同舟云学术

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Complete logic operations in an ambipolar tellurium homojunction via non-invasive scanning probe lithography

Published:2023-09 Issue:3 Volume:1 Page:100069
ISSN:2666-9986
Container-title:Device
language:en
Short-container-title:Device

Author:

Ying Haoting,Xu Manzhang,Xu Xiaotong,Wen Liaoyong,Liu Zheng,Wang Xuewen,Zheng Xiaorui^ORCID,Huang Wei

Publisher

Elsevier BV

Reference68 articles.

1. Low-resistance metal contacts to encapsulated semiconductor monolayers with long transfer length;Liu;Nat. Electron.,2022

2. Large-scale growth of few-layer two-dimensional black phosphorus;Wu;Nat. Mater.,2021

3. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se;Wu;Nat. Nanotechnol.,2017

4. Satisfiability attack-resistant camouflaged two-dimensional heterostructure devices;Wali;ACS Nano,2021

5. Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors;Gao;Adv. Mater.,2016

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inorganic p-Type Tellurium-Based Synaptic Transistors: Complementary Synaptic Pairs with n-Type Devices for Energy-Efficient Operation;ACS Applied Electronic Materials;2024-07-01

2. Split-Gate: Harnessing Gate Modulation Power in Thin-Film Electronics;Micromachines;2024-01-22

3. Morphology-controlled synthesis, growth mechanism, and applications of tellurium nanostructures;Materials Advances;2024

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