Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory-Reference-Cited by-同舟云学术

Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory

Published:2016-07-20 Issue:37 Volume:28 Page:8227-8233
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Cui Ajuan¹,Liu Zhe²,Dong Huanli¹,Yang Fangxu¹,Zhen Yonggang¹,Li Wuxia²,Li Junjie²,Gu Changzhi²,Zhang Xiaotao³,Li Rongjin³,Hu Wenping¹³

Affiliation:

1. Beijing National Laboratory for Molecular Sciences; Key Laboratory of Organic Solids; Institute of Chemistry; Chinese Academy of Sciences; Beijing 100190 P. R. China

2. Beijing National Laboratory for Condensed Matter Physics; Collaborative Innovation Center of Quantum Matter, Institute of Physics; Chinese Academy of Sciences; Beijing 100190 P. R. China

3. Tianjin Key Laboratory of Molecular Optoelectronic Sciences; Department of Chemistry; School of Science; Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin); Tianjin 300072 China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201603124/fullpdf

Reference45 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

3. Memory and Threshold Resistance Switching in Ni/NiO Core–Shell Nanowires

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