3D-Transistor Array Based on Horizontally Suspended Silicon Nano-bridges Grown via a Bottom-Up Technique-Reference-Cited by-同舟云学术

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3D-Transistor Array Based on Horizontally Suspended Silicon Nano-bridges Grown via a Bottom-Up Technique

Published:2014-01-30 Issue:12 Volume:26 Page:1929-1934
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Oh Jin Yong¹,Park Jong-Tae²,Jang Hyun-June³,Cho Won-Ju³,Islam M. Saif¹

Affiliation:

1. Department of Electrical and Computer Engineering, Center for Nano and Micro Manufacturing; University of California; Davis CA 95616 USA

2. Department of Electronics Engineering; University of Incheon; Incheon 406-772 Republic of Korea

3. Department of Electronic Materials Engineering; Kwangwoon University; Seoul 139-701 Republic of Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201304245/fullpdf

Reference50 articles.

1. Vertical nanowire array-based field effect transistors for ultimate scaling

2. InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

3. Largely Enhanced Efficiency in ZnO Nanowire/p-Polymer Hybridized Inorganic/Organic Ultraviolet Light-Emitting Diode by Piezo-Phototronic Effect

4. ${\rm Ga}_{2}{\rm O}_{3}$ Nanowire Photodetector Prepared on ${\rm SiO}_{2}/{\rm Si}$ Template

5. An In2O3 nanowire-like network fabricated on coplanar sensor surface by sacrificial CNTs for enhanced gas sensing performance

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