Modelling of pseudomorphic AlGaAs/GaInAs/AlGaAs layers using selfconsistent approach
Author:
Publisher
Wiley
Subject
Electrical and Electronic Engineering
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/ett.4460010410/fullpdf
Reference7 articles.
1. P. M. Smith, et al: InGaAs pseudomorphic HEMTS for millimeter-wave power application. IEEE MTT.S digest, 1988. p. 927.
2. The electron transport properties of strained InxGa1-xAs;Thobel;Appl. Phy. Lett,1990
3. Self-consistent results for n-type Si inversion layers;Stern;Phys. Rev. B,1972
4. Optical investigation of a new type of valence band configuration in In, Ga, - As-GaAs strained superlattices;Marzin;Phys. Rev. B,1985
5. Effect of mismatch strain on bandgap in III-V semiconductors;Kuo;J. Appl. Phys.,1985
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1. Improved Monte Carlo algorithm for the simulation of δ-doped AlInAs/GaInAs HEMTs;IEEE Transactions on Electron Devices;2000
2. Numerical analysis of device performance of metamorphic In/sub y/Al/sub 1-y/As/In/sub x/Ga/sub 1-x/As (0.3≤x≤0.6) HEMTs on GaAs substrate;IEEE Transactions on Electron Devices;1998
3. Monte Carlo study of diffusion phenomena in III - V modulation doped heterostructures;Semiconductor Science and Technology;1997-01-01
4. Monte Carlo study of electron transport in III–V heterostructures with doped quantum wells;Journal of Applied Physics;1996-07-15
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