Electron transport properties of strained InxGa1−xAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102780
Reference11 articles.
1. Strained-layer superlattices: A brief review
2. Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors
3. DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs
4. Theory of electronic transport in two‐dimensional Ga0.85In0.15As/Al0.15Ga0.85As pseudomorphic structures
5. Material parameters of In1−xGaxAsyP1−yand related binaries
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