Identification of Nucleation Center Sites in Thermally Annealed Hydrogenated Amorphous Silicon-Reference-Cited by-同舟云学术

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Identification of Nucleation Center Sites in Thermally Annealed Hydrogenated Amorphous Silicon

Published:2009-07-24 Issue:14 Volume:19 Page:2338-2344
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Mahan A. Harv,Su Tining,Williamson Don L.,Gedvilas Lynn M.,Ahrenkiel S. Phil,Parilla Phillip A.,Xu Yueqin,Ginley David A.

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.200801709/fullpdf

Reference49 articles.

1. Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters

2. Crystallization of amorphous hydrogenated silicon films deposited under various conditions

3. Grain Nucleation and Grain Growth During Crystallization of HWCVD a-Si:H Films

4. A comparison of grain nucleation and grain growth during crystallization of HWCVD and PECVD a-Si:H films

5. Large-grain polycrystalline silicon films with low intragranular defect density by low-temperature solid-phase crystallization without underlying oxide

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1. In Situ-Doped Silicon Thin Films for Passivating Contacts by Hot-Wire Chemical Vapor Deposition with a High Deposition Rate of 42 nm/min;ACS Applied Materials & Interfaces;2019-07-30

2. Highly retarded crystallization in hydrogenated amorphous germanium; emergence of a porous nanocrystalline structure;Thin Solid Films;2016-09

3. Similarities between amorphous and microcrystalline forms of hydrogenated silicon from periodic DFT modelling: coupled Si–H vibrations in (SiH)X groups, X = 2–4;Molecular Physics;2016-06-24

4. Transient crystal grain nucleation in As doped amorphous silicon;Materials Letters;2014-07

5. The effect of film tensile stress on crystallite nucleation and growth in thermally annealed a-Si:H;Journal of Applied Physics;2014-02-28

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