A transient ionizing radiation SPICE model for PDSOI MOSFET-Reference-Cited by-同舟云学术

A transient ionizing radiation SPICE model for PDSOI MOSFET

Published:2020-02-18 Issue:8 Volume:63 Page:2103-2107
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw Opt Technol Lett

Author:

Gao Libo¹²^ORCID,Du Chuanhua³,Bu Jianhui¹²,Li Jiangjiang¹²,Ma Quangang¹²,Zhao Fazhan¹²,Zeng Chao³,Gao Jiantou¹²,Li Duoli¹²,Zeng Chuanbin¹²,Han Zhengsheng¹²⁴,Luo Jiajun¹²

Affiliation:

1. Institute of Microelectronics of Chinese Academy of Sciences Beijing China

2. Key Laboratory of Silicon Device Technology Chinese Academy of Sciences Beijing China

3. Institute of Electronic Engineering CAEP Mianyang China

4. University of Chinese Academy of Sciences Beijing China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/mop.32317

Reference12 articles.

1. The Transient Response of Transistors and Diodes to Ionizing Radiation

2. Transient Response Model for Epitaxial Transistors

3. Transient ionizing radiation effects in devices and circuits

4. MassengillLW The Implementation of a General Time and Voltage Dependent Current Source in the Circuit Simulation Program Spice Master's thesis. North Carolina State University; 1984.

5. Modeling of high-dose-rate transient ionizing radiation effects in bipolar devices

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