Experimental Study of Transient Dose Rate Effects of Two Level-Shifting Transceivers and Simulations on Their ESD Circuits
Author:
Affiliation:
1. Department of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an, China
2. State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Northwest Institute of Nuclear Technology), Xi’an, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx7/23/9777895/09669266.pdf?arnumber=9669266
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