Comprehensive study of the radiation effects on the LDMOS transistors-Reference-Cited by-同舟云学术

Comprehensive study of the radiation effects on the LDMOS transistors

Published:2022-12 Issue: Volume:139 Page:114793
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Lei Zeyu,Zhang Chenchen,Wu Ming,Zou Xuming,Yan Junzheng,Chen Zhuojun

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

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3. Radiation effects in power systems: A review;Adell;IEEE Trans. Nucl. Sci.,2013

4. B.K. Mahajan, Y.-P. Chen, U.A.H. Rivera, R. Rahimi, M.A. Alam, Correlated Effects of Radiation and Hot Carrier Degradation on the Performance of LDMOS Transistors, in: 2022 IEEE International Reliability Physics Symposium, IRPS, 2022, pp. P52–1–P52–5.

5. Z. Yuan, M. Qiao, X. Li, X. Zhou, Z. Li, B. Zhang, An Improved Model on Buried-Oxide Damage for Total-Ionizing-Dose Effect on HV SOI LDMOS, in: 2020 IEEE International Electron Devices Meeting, IEDM, 2020, pp. 9.5.1–9.5.4.

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1. A novel double-gate trench SOI LDMOS with double-dielectric material by TCAD simulation study;Semiconductor Science and Technology;2024-05-20

2. A Source Segmented LDMOS Structure for Improving Single Event Burnout Tolerance Based on High-Voltage BCD Process;IEEE Transactions on Device and Materials Reliability;2024-03

3. A comprehensive analysis of LDMOS transistors for analog applications under γ-radiation;Microelectronics Reliability;2023-09

4. Microdose Effect of SGT MOSFETs induced by Heavy Ions;2023 5th International Conference on Radiation Effects of Electronic Devices (ICREED);2023-05-24