Synergistic Effects Simulation of MOSFET by Control Volume Finite Element Method
Author:
Affiliation:
1. Innovative Institute of Electromagnetic Information and Electronic Integration, Zhejiang University,Hangzhou,China,310058
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10249211/10249015/10250124.pdf?arnumber=10250124
Reference13 articles.
1. A transient ionizing radiation SPICE model for PDSOI MOSFET
2. Synergistic Effects of TID and ATREE in Vertical NPN Bipolar Transistor
3. Hexahedron-Based Control Volume Finite Element Method for Fully Coupled Nonlinear Drift-Diffusion Transport Equations in Semiconductor Devices
4. Modeling of total ionizing dose effects in advanced complementary metal-oxide-semiconductor technologies;esqueda;Arizona State University,2011
5. Transient Power Loss Density of Electromagnetic Pulse in Debye Media
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