Epitaxial growth and characterization of InN nanorods and compact layers on silicon substrates
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
2. Unusual properties of the fundamental band gap of InN
3. The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
4. Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties
5. AlGaN Nanocolumns and AlGaN/GaN/AlGaN Nanostructures Grown by Molecular Beam Epitaxy
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1. Recent progress in group III-nitride nanostructures: From materials to applications;Materials Science and Engineering: R: Reports;2020-10
2. Growth of narrow substrate temperature window on the crystalline quality of InN epilayers on AlN/Si(1 1 1) substrates using RF-MOMBE;Journal of Crystal Growth;2019-09
3. Hexagonal Nanopyramidal Prisms of Nearly Intrinsic InN on Patterned GaN Nanowire Arrays;Crystal Growth & Design;2018-01-25
4. InN Nanowires;Semiconductors and Semimetals;2017
5. The synthesis of 3D InN architectures via chemical vapor deposition and their optical properties;RSC Advances;2016
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