Growth of narrow substrate temperature window on the crystalline quality of InN epilayers on AlN/Si(1 1 1) substrates using RF-MOMBE
Author:
Funder
Ministry of Science and Technology
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
1. Optical bandgap energy of wurtzite InN
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3. Improving InGaN heterojunction solar cells efficiency using a semibulk absorber
4. Mechanism of TMAl pre-seeding in AlN epitaxy on Si (111) substrate
5. Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Investigation of line-shaped CO2 laser annealing on InN/AlN/sapphire substrates;The International Journal of Advanced Manufacturing Technology;2022-04-01
2. Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD;Coatings;2020-12-04
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