Reduction of the threading edge dislocation density in AlGaN epilayers by GaN nucleation for efficient 350 nm light emitting diodes
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Ultraviolet light-emitting diodes based on group three nitrides
2. High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer
3. Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer
4. Effect of dislocations on electrical and optical properties of n-type Al0.34Ga0.66N
5. Realization of 340-nm-Band High-Output-Power (>7 mW) InAlGaN Quantum Well Ultraviolet Light-Emitting Diode with p-Type InAlGaN
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4. High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes;Japanese Journal of Applied Physics;2013-08-01
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