Effect of dislocations on electrical and optical properties of n-type Al0.34Ga0.66N
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3021076
Reference19 articles.
1. Scattering of electrons at threading dislocations in GaN
2. Optical analysis of dislocation-related physical processes in GaN-based epilayers
3. Characterization of threading dislocations in GaN epitaxial layers
4. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
5. Deep acceptors trapped at threading-edge dislocations in GaN
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