Degradation of external quantum efficiency of AlGaN UV LEDs grown by hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

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Degradation of external quantum efficiency of AlGaN UV LEDs grown by hydride vapor phase epitaxy

Published:2015-01-23 Issue:4-5 Volume:12 Page:349-352
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Shmidt Natalia,Usikov Alexander,Shabunina Eugenia,Chernyakov Anton,Sakharov Alexey,Kurin Sergey,Antipov Andrei,Barash Iosif,Roenkov Alexander,Helava Heikki,Makarov Yuri

Publisher

Wiley

Subject

Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssc.201400172/fullpdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Non-radiative coupled donor-acceptor pair recombination in nanostructures based on nitrides and related phenomena;Journal of Physics: Conference Series;2018-12

2. Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System;Semiconductors;2018-06-07

3. On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena;Semiconductors;2016-09

4. Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells;Journal of Applied Physics;2016-05-28

5. Alteration of structural and optical properties in quaternary Al0.1In0.1Ga0.8N films using ultraviolet assisted photo-electrochemical etching route;Journal of Alloys and Compounds;2015-11

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