Photoluminescence studies of GaN: A comparison between layers grown on sapphire and nitridated GaAs layers
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. C and Si ion implantation and the origins of yellow luminescence in GaN
2. Selective excitation and thermal quenching of the yellow luminescence of GaN
3. Chemical origin of the yellow luminescence in GaN
4. Time-resolved cathodoluminescence and photocurrent study of the yellow band in Si-doped GaN
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1. Hexagonal Nanocrystal Growth of Mg or Zn from Incorporation in GaN Powders Obtained through Pyrolysis of a Viscous Complex Compound and Its Nitridation;Crystals;2023-09-25
2. Optical and Structural Analysis of GaN Microneedle Crystals Obtained via GaAs Substrates Decomposition and their Possible Growth Model Using the Volmer–Weber Mechanism;physica status solidi (b);2022-11-11
3. Asymmetrical Spectral Continuum between Anti-Stokes and Stokes Scattering Revealed in Low-Frequency Surface-Enhanced Raman Spectroscopy;The Journal of Physical Chemistry C;2022-06-28
4. Influence of the GaAs crystals diffusion in the shift towards low energies in the photoluminescence emission band of the GaN/GaNbuffer/GaAs structure;Optical Materials;2019-02
5. P-type GaN powders obtained by nitridation of Ga-Mg liquid metallic solution;Journal of Alloys and Compounds;2019-01
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