Optical and Structural Analysis of GaN Microneedle Crystals Obtained via GaAs Substrates Decomposition and their Possible Growth Model Using the Volmer

Optical and Structural Analysis of GaN Microneedle Crystals Obtained via GaAs Substrates Decomposition and their Possible Growth Model Using the Volmer–Weber Mechanism

Published:2022-11-11 Issue:2 Volume:260 Page:2200201
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Gastellóu Erick¹²^ORCID,García Rafael¹,Herrera Ana M.¹,Ramos Antonio¹,García Godofredo³,Hirata Gustavo A.⁴,Brown Francisco⁵,Morales Crisoforo³,Luna José A.³,Rodríguez Jorge A.²,Robles Mario²,Ramírez Yani D.⁶

Affiliation:

1. Departamento de Investigación en Física Universidad de Sonora Rosales y Colosio, C. De la Sabiduría, Centro Hermosillo Sonora 83000 México

2. División de Sistemas Automotrices Univerisdad Tecnológica de Puebla Antiguo Camino a la Resurrección 1002 - A, Zona Industrial 72300 Puebla Puebla México

3. Centro de Investigacion en Dispositivos Semiconductores Benemérita Universidad Autónoma de Puebla 14 Sur y Av. San Claudio Puebla Puebla 72570 México

4. Centro de Nanociencias y Nanotecnología Universidad Nacional Autónoma de México Carr. Tijuana-Ensenada km107, C.I.C.E.S.E. Ensenada Baja California 22860 México

5. Departamento de Polímeros y Materiales Universidad de Sonora Rosales y Colosio, C. De la Sabiduría S/N, Centro Hermosillo Sonora 83000 México

6. Univerisdad Tecnológica de Puebla Antiguo Camino a La Resurrección 1002 - A, Zona Industrial 72300 Puebla Puebla México

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202200201

Reference30 articles.

1. The 2018 GaN power electronics roadmap

2. High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$

3. Non-polar true-lateral GaN power diodes on foreign substrates

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