Hexagonal Nanocrystal Growth of Mg or Zn from Incorporation in GaN Powders Obtained through Pyrolysis of a Viscous Complex Compound and Its Nitridation

Author:

Gastellóu Erick12ORCID,García Rafael2,Herrera Ana M.2,Ramos Antonio2,García Godofredo3,Hirata Gustavo A.4ORCID,Luna José A.3ORCID,Carrillo Roberto C.5ORCID,Rodríguez Jorge A.1,Robles Mario1,Ramírez Yani D.6

Affiliation:

1. División de Sistemas Automotrices, Universidad Tecnológica de Puebla (UTP), Antiguo Camino a la Resurrección 1002-A, Zona Industrial, Puebla 72300, Puebla, Mexico

2. Departamento de Investigación en Física, Universidad de Sonora (UNISON), Rosales y Colosio, C. De la Sabiduría, Centro, Hermosillo 83000, Sonora, Mexico

3. Centro de Investigacion en Dispositivos Semiconductores, Benemérita Universidad Autónoma de Puebla (BUAP), 14 Sur y Av. San Claudio, Puebla 72570, Puebla, Mexico

4. Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México (UNAM), Carr. Tijuana-Ensenada km107, C.I.C.E.S.E., Ensenada 22860, Baja California, Mexico

5. Departamento de Física, Universidad de Sonora (UNISON), Rosales y Colosio, C. De la Sabiduría, Centro, Hermosillo 83000, Sonora, Mexico

6. Departamento de Investigación y Desarrollo, Universidad Tecnológica de Puebla (UTP), Antiguo Camino a La Resurrección 1002-A, Zona Industrial, Puebla 72300, Pueble, Mexico

Abstract

Hexagonal nanocrystals were obtained from Zn-doped GaN powders and Mg-doped GaN powders, which were synthesized via pyrolysis of a viscous complex compound, followed by its nitridation. XRD showed well-defined peaks for hexagonal GaN with an average crystal size of 21.3 nm. Scanning electron microscopy showed an amorphous and porous appearance in surface morphology, which could be related to the combustion process. Energy-dispersive spectroscopy characterization showed contributions of gallium, nitrogen, and small traces of Zn and Mg in the GaN samples. TEM showed the presence of well-defined hexagonal nanocrystals with an area of 75.9 nm2 for the Zn-doped GaN powders and an area of 67.7 nm2 for the Mg-doped GaN powders. The photoluminescence spectra showed an emission energy of 2.8 eV (431.5 nm) for the Zn-doped GaN powders, while the Mg-doped GaN powders showed energies in the range from 2.7 eV to 2.8 eV (460.3 nm–443.9 nm). The Raman scattering showed spectra where the vibration modes A1(TO), E1(TO), and E2(High) could be observed, which are characteristic of hexagonal GaN.

Publisher

MDPI AG

Subject

Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering

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