Ultrafast intersubband optical switching in II–VI-based quantum well for optical fiber communications
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Well-width and doping-density dependence of 1.35 μm intersubband transition in InGaAs/AlAsSb quantum wells
2. Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
3. Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm
4. Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy
5. Short-wavelength intersubband transitions down to 1.6 μm in ZnSe/BeTe type-II superlattices
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1. An atomic scale study of surface termination and digital alloy growth in InGaAs/AlAsSb multi-quantum wells;Journal of Physics: Condensed Matter;2016-05-26
2. Fiber, holographic, quantum optical and other types of optical switches;Optical Switches;2010
3. Optical Kerr signals of GaAs/AlAs multilayer cavities for a short pulse;physica status solidi (c);2009-06
4. All-optical switching based on controlled energy transfer between nanoparticles in film arrays;Journal of Nanophotonics;2009-01-01
5. Asymmetric temporal profile of optical Kerr signal from GaAs/AlAs multilayer with λ/2 phase shift layer;physica status solidi (c);2009-01
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