Optical properties of Si-, Ge- and Sn-doped GaN
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. and , The Blue Laser Diode (Springer-Verlag, Heidelberg, 1997).
2. Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy
3. Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template
4. Exciton fine structure in undoped GaN epitaxial films
5. Measurement of phonon-exciton dephasing rate in GaN on sapphire by degenerate four-wave mixing
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