Chip Size Minimization for Wide and Ultrawide Bandgap Power Devices-Reference-Cited by-同舟云学术

Chip Size Minimization for Wide and Ultrawide Bandgap Power Devices

Published:2023-02 Issue:2 Volume:70 Page:633-639
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Boyan¹^ORCID,Xiao Ming¹^ORCID,Zhang Zichen¹^ORCID,Wang Yifan¹,Qin Yuan¹^ORCID,Song Qihao¹^ORCID,Lu Guo-Quan¹^ORCID,Ngo Khai¹^ORCID,Zhang Yuhao¹^ORCID

Affiliation:

1. Center for Power Electronics Systems (CPES), Virginia Polytechnic Institute and State University, Blacksburg, VA, USA

Funder

Advanced Research Projects Agency-Energy of the Department of Energy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10025571/10005012.pdf?arnumber=10005012

Reference42 articles.

1. 1.2 kV Vertical GaN Fin JFETs with Robust Avalanche and Fast Switching Capabilities

2. Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit

3. ZVS of Power MOSFETs Revisited

4. Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices

5. Two-Dimensional Numerical Investigation on Applicability of 45<sup>。</sup>Heat Spreading Angle

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