A scalable advanced RF IC design-oriented MOSFET model-Reference-Cited by-同舟云学术

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A scalable advanced RF IC design-oriented MOSFET model

Published:2008 Issue:4 Volume:18 Page:314-325
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF and Microwave Comp Aid Eng

Author:

Bucher Matthias,Bazigos Antonios,Yoshitomi Sadayuki,Itoh Nobuyuki

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Reference16 articles.

1. High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs

2. A CAD methodology for optimizing transistor current and sizing in analog CMOS design

3. An MOS transistor model for RF IC design valid in all regions of operation

4. MOSFET Modeling for RF IC Design

5. A compact non-quasi-static extension of a charge-based MOS model

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2. Compact/SPICE Modeling;Springer Handbook of Semiconductor Devices;2022-11-11

3. Design of Junction-less Twin Source Nanotube TFET for Improved DC and RF Circuit Applications;Silicon;2022-04-07

4. A Regulated Sensing Solution Based on a Self-reference Principle for PCM + OTS Memory Array;VLSI-SoC: Technology Advancement on SoC Design;2022

5. Accurate and Computationally Efficient Modeling of Nonquasi Static Effects in MOSFETs for Millimeter-Wave Applications;IEEE Transactions on Electron Devices;2019-01

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