Accurate and Computationally Efficient Modeling of Nonquasi Static Effects in MOSFETs for Millimeter-Wave Applications-Reference-Cited by-同舟云学术

Accurate and Computationally Efficient Modeling of Nonquasi Static Effects in MOSFETs for Millimeter-Wave Applications

Published:2019-01 Issue:1 Volume:66 Page:44-51
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Gupta Chetan^ORCID,Mohamed Noor,Agarwal Harshit^ORCID,Goel Ravi^ORCID,Hu Chenming,Chauhan Yogesh Singh^ORCID

Funder

Berkeley Device Modeling Center, Department of Science and Technology, Science and Engineering Research Board, Council of Scientific and Industrial Research

Ramanujan Fellowship Research Grant

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8585319/08423438.pdf?arnumber=8423438

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