Atomic‐Layer‐Ti‐Doped Ga 2 O 3 Thin Films with Tunable Optical Properties and Wide Ultraviolet Optoelectronic Responses-Reference-Cited by-同舟云学术

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Atomic‐Layer‐Ti‐Doped Ga 2 O 3 Thin Films with Tunable Optical Properties and Wide Ultraviolet Optoelectronic Responses

Published:2021-09-14 Issue:11 Volume:15 Page:2100411
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Liu Weiming¹,Zhu Xudan¹,He Junbo¹,Yang Yan²,Huang Tiantian²,Chen Xin²³^ORCID,Zhang Rongjun¹⁴⁵

Affiliation:

1. Department of Optical Science and Engineering Fudan University Shanghai 200433 China

2. State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China

3. Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou 310024 China

4. Academy for Engineering and Technology Fudan University Shanghai 200433 China

5. Institute of Optoelectronics Fudan University Shanghai 200433 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100411

Reference45 articles.

1. A review of Ga2O3materials, processing, and devices

2. Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications

3. Ultra-thin sub-10 nm Ga2O3-WO3 heterostructures developed by atomic layer deposition for sensitive and selective C2H5OH detection on ppm level

4. High Responsivity β-Ga2O3 Metal–Semiconductor–Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes

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1. Effects of Ta concentration on microstructure, optical and optoelectronic properties of Ga2O3:Ta films;Vacuum;2024-06

2. Toward deeper ultraviolet detection: Atomic layer deposited amorphous AlGaOx thin film detector with its tunable optical properties and opto-electronic responses;Ceramics International;2024-06

3. Toward Broadband Photodetection: Band Alignment and Interlayer Charge Transfer in 2D Transition Metal Dichalcogenides/3D-Ga₂O₃ Hybrid-Dimensional Heterostructures;ACS Applied Materials & Interfaces;2024-03-14

4. Boosting the responsivity of amorphous-Ga2O3 solar-blind photodetector via organosilicon surface passivation;Applied Physics Letters;2024-02-19

5. Effects of growth cycle number and annealing temperature on Ga2O3-on-quartz solar-blind photodetectors;Materials Chemistry and Physics;2023-09

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